GOST 11630-84
ГОСТ 11630-84
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Semiconductor devices. General specification
Приборы полупроводниковые. Общие технические условия
Status: Effective - Supersedes. The limitation of effectiveness has been lifted: Resolution of the State Standard No. 826 of 07/30/92
The standard applies to semiconductor devices, emitting diodes and optocouplers for industrial purposes and consumer goods (hereinafter referred to as devices) manufactured for national economy and export. The standard does not apply to packageless devices, power semiconductor devices, selenium devices, semiconductor radiation detectors, microwave diodes.
Стандарт распространяется на полупроводниковые приборы, излучающие диоды и оптопары производственно-технического назначения и народного потребления (далее - приборы), изготовляемые для народного хозяйства и экспорта. Стандарт не распространяется на бескорпусные приборы, силовые полупроводниковые приборы, селеновые приборы, полупроводниковые приемники излучения, диоды СВЧ.
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Format: Electronic (pdf/doc)
Approved: USSR State Committee for Standards,
6/29/1984
SKU: RUSS72191
The Product is Contained in the Following Classifiers:
Welding regulations »
Welding work »
Welding regulations »
Documentation »
Welding regulations »
Non-destructive control »
Welding regulations »
Welding work »
Soldering »
Welding regulations »
Welding work »
Dusting »
PromExpert »
SECTION I. TECHNICAL REGULATION »
V Testing and control »
4 Testing and control of products »
4.15 Testing and control of products of electronic, optical and electrical industry »
4.15.2 Equipment and apparatus for radio, television and communication »
ISO classifier »
31 ELECTRONICS »
31.080 Semiconductors »
National standards »
31 ELECTRONICS »
31.080 Semiconductors »
ISO classifier »
31 ELECTRONICS »
31.080 Semiconductors »
31.080.01 Semiconductor devices in general »
National standards »
31 ELECTRONICS »
31.080 Semiconductors »
31.080.01 Semiconductor devices in general »
National Standards for KGS (State Standards Classification) »
Latest edition »
E Electronic engineering, electronics and communications »
E2 Elements of electronic equipment »
E20 Classification, nomenclature and general norms »
National Standards for OKSTU »
ELECTRONIC PRODUCTS, EXCEPT RESISTORS, CAPACITORS, SEMICONDUCTOR DEVICES AND INTEGRAL MICROCIRCUITS »
Lasers »
As a Replacement Of:
GOST 11630-70: Semiconductor devices for devices of wide application. General specifications
The Document References:
GOST 14192-77: Marking of cargoes
GOST 15150-69: Machines, instruments and other industrial products. Modifications for different climatic regions. Categories, operating, storage and transportation conditions as to environment climatic aspects influence
GOST 16201-70: Transistors. Method for measuring base resistance at frequencies up to 1 MHz
GOST 18242-72: Statistical acceptance inspection by alternative feature inspection plans
GOST 18472-82: Semiconductor devices. Basic dimensions
GOST 18604.0-83: Bipolar transistors. General requirements for measuring of electrical parameters
GOST 18604.10-76: Transistors bipolar. Input resistance measurement technique
GOST 18604.11-76: Transistors bipolar. Method of measuring noise figure at high and ultra-high frequencies
GOST 18604.13-77: Bipolar microwave oscillator transistors. Techniques for measuring output power, power gain and collector efficiency
GOST 18604.14-77: Bipolar microwave oscillator transistors. Techniques for measuring coefficient modulus of inverse transmission of voltage in the circuit with general base at high frequency
GOST 18604.15-77: Bipolar microwave oscillator transistors. Techniques for measuring critical current
GOST 18604.16-78: Transistors bipolar. Method of measurement of voltage feedback ratio in low signal conditionals
GOST 18604.17-78: Bipolar transistors. Method for measuring floating voltage emitter-base
GOST 18604.1-80: Transistors bipolar. Method for measuring collector-to base time constant at high frequencies
GOST 18604.18-78: Bipolar transistors. Methods for measuring the static steepness of direct transmission
GOST 18604.19-78: Bipolar transistors. Methods for measuring boundary voltage
GOST 18604.20-78: Transistors bipolar. Methods for measuring noise figure at low frequencies
GOST 18604.21-78: Bipolar transistors. Methods for measuring the resorption time
GOST 18604.22-78: Transistors bipolar. Methods for measuring collector-emitter and base-emitter saturation voltage
GOST 18604.23-80: Bipolar transistors. Method for measuring combination frequencies
GOST 18604.24-81: Transistors bipolar high-frequency. Techniques for measuring output power, power gain and collector efficiency
GOST 18604.3-80: Transistors bipolar. Methods for measuring collector and emitter capacitances
GOST 18604.4-74: Transistors. Method for measuring collector reverse current
GOST 18604.5-74: Transistors. Method for measuring collector-emitter reverse current
GOST 18604.6-74: Transistors. Method for measuring emitter reverse current
GOST 18604.7-74: Transistors. Method for measuring current transfer coefficient
GOST 18604.8-74: Transistors. Method for measuring output conductivity
GOST 18604.9-82: Transistors bipolar. Methods for determining cut-off frequency and transition frequency
GOST 18986.0-74: Semiconductor diodes. Measuring methods for electrical parameters. General requirements
GOST 18986.10-74: Semiconductor diodes. Methods for measuring inductance
GOST 18986.11-74: Semiconductor diodes. Methods for measuring loss resistance
GOST 18986.12-74: Semiconductor tunnel diodes. Method for measuring negative conductance of the intrinsic diode
GOST 18986.13-74: Semiconductor tunnel diodes. Methods for measuring peak point current, valley point current, peak point voltage, valley point voltage, projected peak point voltage
GOST 18986.14-85: Semiconductor diodes. Methods for measuring differential and slope resistances
GOST 18986.15-75: Reference diodes. Method of measuring stabilization voltage
GOST 18986.16-72: Rectifier diodes. Methods of measuring average forward voltage and average reverse current
GOST 18986.1-73: Semiconductor diodes. Method for measuring direct reverse current
GOST 18986.17-73: Reference diodes. Method of measuring of temperature coefficient of working voltage
GOST 18986.18-73: Variable capacitance diodes. Method of measuring temperature coefficient of capacitance
GOST 18986.19-73: Variable capacitance diodes. Method for measuring the quality factor
GOST 18986.20-77: Semiconductor diodes. Reference zener diodes. Method for measuring warm up time
GOST 18986.21-78: Reference diodes and stabistors. Method for measuring time drift of working voltage
GOST 18986.22-78: Reference diodes. Methods for measuring differential resistance
GOST 18986.23-80: Zener diodes. Methods for measuring spectral noise density
GOST 18986.24-83: Semiconductor diodes. Measurement method of breakdown voltage
GOST 18986.2-73: Semiconductor diodes. Method for measuring DC voltage
GOST 18986.3-73: Semiconductor diodes. Method of measuring of direct forward voltage and direct forward current
GOST 18986.4-73: Semiconductor diodes. Methods for measuring capacitance
GOST 18986.5-73: Semiconductor diodes. Method for measuring transition time
GOST 18986.6-73: Semiconductor diodes. Method for measuring recovery charge
GOST 18986.7-73: Semiconductor diodes. Methods for measuring life time
GOST 18986.8-73: Semiconductor diodes. Method for measuring reverse recovery time
GOST 18986.9-73: Semiconductor diodes. Method for measuring pulse direct voltage and forward recovery time
GOST 19138.0-74: Thyristors. Methods of electric parameters measuring. General principles
GOST 19138.10-75: Thyristors. Method of measuring the voltage in the open state
GOST 19138.11-75: Thyristors. The method of measuring the constant gate current and the constant gate voltage of the control electrode
GOST 19138.1-73: Thyristors. Method for measuring the switching voltage
GOST 19138.2-73: Thyristors. The method of measuring the pulsed unlocking current and the impulse gate voltage of the control electrode
GOST 19138.3-73: Thyristors. Method for measuring transition time
GOST 19138.4-73: Thyristors. Method for measuring turn-on, rise and delay times
GOST 19138.5-74: Thyristors. Method for measuring the time of activation, rise and delay of the control electrode
GOST 19138.6-74: Thyristors. Method for measuring the critical rate of voltage rise in the closed state
GOST 19138.7-74: Thyristors. Measurement method of peak gate turn-off current, peak gate turn-off voltage, peak turn-off coefficient
GOST 19138.8-75: Thyristors. The method of measuring the confining current
GOST 19138.9-75: Thyristors. Method of measuring current in closed state and reverse current
GOST 19613-80: Poles and blocks rectifying semiconductor. Basic dimensions
GOST 19834.0-75: Semiconductor emitters. Methods for measurement of parameters. General principles
GOST 19834.2-74: Semiconductor emitters. Methods for measurement of radiant intensity and radiance
GOST 19834.3-76: Semiconductor emitters. Methods for measuring of relative spectral energy distribution and spectral bandwidth
GOST 19834.4-79: Semiconductor radiating infra-red diodes. Methods of measurement of radiation power
GOST 19834.5-80: Semiconductor emitting infra-red diodes. Method for measuring of radiation pulse switching times
GOST 20.57.406-81: Electrical equipment, devices for electronic technology and quantum electronics
GOST 20398.0-83: Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.11-80: Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.12-80: Field-effect transistors. Drain residual current measurement technique
GOST 20398.13-80: Field-effect transistors. Drain source resistance measurement technique
GOST 20398.1-74: Field-effect transistors. Shot-circuit forward transfer admittance measurement technique
GOST 20398.2-74: Field-effect transistors. Noise figure measurement technique
GOST 20398.3-74: Field-effect transistors. Forward transconductance measurement technique
GOST 20398.4-74: Field-effect transistors. Active output conductance component measurement technique
GOST 20398.5-74: Field-effect transistors. Input transfer and output capacitance measurement technique
GOST 20398.6-74: Field-effect transistors. Gate leakage current measurement technique
GOST 20398.7-74: Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 20398.8-74: Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.9-80: Field-effect transistors. Forward transconductance impulse measurement technique
GOST 21493-76: Electronic components. Storageability requirements and test methods
GOST 23088-80: Electronic components. Requirements for package, transportation and test methods
GOST 23135-78: Articles of electronics. General requirements when delivering for export
GOST 23448-79: Semiconductor infra-red emitting diodes. Basic dimensions
GOST 24354-80: Semiconductor character displays. Basic dimensions
GOST 24385-80: Electronic components. The rules marking of packing
GOST 24613.0-81: Optoelectronic integrated microcircuits and opto-couples. General requirements at measuring of electrical parameters
GOST 24613.1-81: Optoelectronic integrated microcircuits and optocouplers. Method for measuring of input-to-output capacitance
GOST 24613.18-77: Optoelectronic integrated microcircuits and optocouplers. Methods for measuring isolation resistance
GOST 24613.19-77: Optoelectronic integrated microcircuits and optocouplers. Method for measuring current transfer ratio
GOST 24613.2-81: Optoelectronic integrated microcircuits and opto-couples. Method for measuring leakage current
GOST 24613.3-81: Optoelectronic integrated microcircuits and opto-couples. Method for measuring input voltage
GOST 24613.6-81: Optoelectronic integrated microcircuits and optocouplers. Method for measuring of isolation voltage
GOST 24613.8-83: Optoelectronic integrated microcircuits and optocouples. Methods for measuring of critical change rate of dielectric voltage
GOST 24613.9-83: Optoelectronic integrated microcircuits and optocouplers. Method for measuring switching times
GOST 25024.4-85: Character displays. Methods measuring brightness, luminous intensity, irregularity of brightness and irregularity of luminous intensity
GOST 25359-82: Electronic components. General requirements on reliability and test methods
GOST 25360-82: Electronic components. Acceptance rules
GOST 25467-82: Articles of electronics. Application conditions. Classification and requirements for resistance to environmental factors influence
GOST 25486-82: Electronic components. Marking
GOST 8.002-71: State system for ensuring the uniformity of measurements. Organization and procedure for verification, revision and examination of measuring instruments
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